Hydrocarbon reaction with HF-cleaned Si(lOQ) and effects on metal-oxide-semiconductor device quality
نویسندگان
چکیده
The surface reactivity of hydrogen-passivated, HF-cleaned Si( 100) towards hydrocarbon adsorption is examined by surface analysis; most hydrocarbons adsorb on the surface. Dangling bonds formed during thermal processing react with fragmented organic molecules forming Sic, Metal-oxide-semiconductor devices fabricated on contaminated surfaces are degraded, with the degree of degradation depending on the nature of the contaminant.
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